Ion beam synthesis of cobalt disilicide using focused ion beam implantation

Abstract

Cobalt disilicide layers were formed by cobalt focused ion beam implantation into silicon. It was found that the CoSi2 layer formation strongly depends on the pixel dwell time. In order to obtain continuous layers, short dwell times of a few μs are needed. Rutherford backscattering and channeling measurements were carried out to understand this effect. The results suggest that the accumulated irradiation damage is larger for longer dwell times. The sputtering yield of cobalt ions was measured and the formation of CoSi2 in noncrystalline silicon investigated.