RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation

J. Teichert; M. Voelskow; L. Bischoff; S. Hausmann

doi:10.1016/s0042-207x(98)00171-7

ScienceGate Book Chapters

JOURNAL ARTICLE

RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation

J. Teichert M. Voelskow L. Bischoff S. Hausmann

Year: 1998 Journal: Vacuum Vol: 51 (2)Pages: 261-266 Publisher: Elsevier BV

DOI: 10.1016/s0042-207x(98)00171-7

Get Full-Text PDF Get Analytical Report

Keywords:

Dwell time Materials science Cobalt Ion beam Silicon Rutherford backscattering spectrometry Beam (structure) Ion implantation Ion Ion beam analysis Focused ion beam Analytical Chemistry (journal) Optoelectronics Optics Chemistry Thin film Metallurgy Nanotechnology Physics

Metrics

Cited By

1.77

FWCI (Field Weighted Citation Impact)

Refs

0.85

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation

Metrics

Topics

Related Documents

Ion beam synthesis of cobalt disilicide using focused ion beam implantation

Investigation of dwell-time effects on the cobalt disilicide formation using focused ion beam implantation

Dose rate effects in focused ion beam synthesis of cobalt disilicide

Dwell-time related effects in focused ion beam synthesis of cobalt disilicide

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions