Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Abstract

This paper presents DC and RF characterization as well as modeling of vertical InAs nanowire MOSFETs with LG = 200 nm and Al2O3/HfO2 high-κ dielectric. Measurements at VDS = 0.5 V show that high transconductance (gm = 1.37 mS/μm), high drive current (IDS = 1.34 mA/μm), and low on-resistance (RON = 287 Ωμm) can be realized using vertical InAs nanowires on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, SVG·LG·WG, is determined to be lowered one order of magnitude compared to similar devices with a high-κ film consisting of HfO2 only. Additionally, with a virtual source model we are able to determine the intrinsic transport properties. These devices (LG = 200 nm) show a high injection velocity (vinj = 1.7·107 cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.