Technique for Compensation of Temperature Drift in Thermal Excited Si-Based Resonant Pressure Sensor

Abstract

A Si-based resonant pressure sensor structure with dual-beam was proposed to solve the problem of serious temperature drift in thermal excited Si-based resonant pressure sensor. In this structure, temperature variation sensed by non-pressure-sensing resonant beam was subtracted from that sensed by pressure-sensing beam, to cancel variations of the pressure-sensing beam with temperature and compensate for temperature drift of thermal-excited Si-based resonant pressure sensor. A prototype of Si-based resonant pressure sensor with dual-beam was developed. Preliminary test results showed that the effect of temperature drift was reduced to 1/30 of the uncompensated device, greatly improving sensing accuracy of thermal excited Si-based resonant pressure sensor.