Interface Engineering for High‐Performance Top‐Gated MoS<sub>2</sub> Field‐Effect Transistors

Xuming Zou; Jingli Wang; Chung‐Hua Chiu; Yun Wu; Xiangheng Xiao; Changzhong Jiang; Wen‐Wei Wu; Liqiang Mai; Tangsheng Chen; Jinchai Li; Johnny C. Ho; Lei Liao

doi:10.1002/adma.201402008

JOURNAL ARTICLE

Interface Engineering for High‐Performance Top‐Gated MoS₂ Field‐Effect Transistors

Xuming Zou Jingli Wang Chung‐Hua Chiu Yun Wu Xiangheng Xiao Changzhong Jiang Wen‐Wei Wu Liqiang Mai Tangsheng Chen Jinchai Li Johnny C. Ho Lei Liao

Year: 2014 Journal: Advanced Materials Vol: 26 (36)Pages: 6255-6261

DOI: 10.1002/adma.201402008

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Abstract

Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date.

Keywords:

Materials science Transistor Interface (matter) Field-effect transistor Optoelectronics Saturation (graph theory) Stack (abstract data type) Nanotechnology Engineering physics Electrical engineering Composite material Computer science Voltage Engineering

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Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Interface Engineering for High‐Performance Top‐Gated MoS₂ Field‐Effect Transistors

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