n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

C.H. Park; I. S. Jeong; Heesun Bae; T.G. Kim; Seongil Im

doi:10.1016/j.nimb.2003.11.031

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n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

C.H. Park I. S. Jeong Heesun Bae T.G. Kim Seongil Im

Year: 2003 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 216 Pages: 127-130 Publisher: Elsevier BV

DOI: 10.1016/j.nimb.2003.11.031

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Keywords:

Overlayer Photodiode Materials science Optoelectronics Quantum efficiency Ultraviolet Heterojunction Fabrication Band gap Photon Ion Optics Chemistry Physics

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

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