n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

C.H. Park; J.Y. Lee; Seongil Im; T.G. Kim

doi:10.1016/s0168-583x(03)00786-9

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n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

C.H. Park J.Y. Lee Seongil Im T.G. Kim

Year: 2003 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 206 Pages: 432-435 Publisher: Elsevier BV

DOI: 10.1016/s0168-583x(03)00786-9

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Keywords:

Photodiode Materials science Optoelectronics Silicon Fabrication Quantum efficiency Sputter deposition Layer (electronics) Thin film Sputtering Nanotechnology

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

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