Planar InAs p-i-n photodiodes fabricated using ion implantation

C. Perrella; Ian Sandall; Chee Hing Tan

doi:10.1109/ipcon.2014.6995393

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Planar InAs p-i-n photodiodes fabricated using ion implantation

C. Perrella Ian Sandall Chee Hing Tan

Year: 2014 Pages: 352-353

DOI: 10.1109/ipcon.2014.6995393

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Abstract

We present a process for fabricating Planar InAs APDs through Be implantation. Fabrication details are discussed in addition to current-voltage, responsivity and gain measurements taken from the diodes.

Keywords:

Responsivity Optoelectronics Planar Photodiode Materials science Diode Fabrication Ion implantation APDS Avalanche photodiode Dark current Voltage Ion Detector Photodetector Optics Electrical engineering Chemistry Computer science Physics Engineering

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Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Planar InAs p-i-n photodiodes fabricated using ion implantation

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