InAs n-i-p Diodes Fabricated Using S and Si Ion Implantation

Tarick Blain; J. Veitch; Vladimir Shulyak; Im Sik Han; M. Hopkinson; Jo Shien Ng; Chee Hing Tan

doi:10.1109/ted.2025.3580394

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InAs n-i-p Diodes Fabricated Using S and Si Ion Implantation

Tarick Blain J. Veitch Vladimir Shulyak Im Sik Han M. Hopkinson Jo Shien Ng Chee Hing Tan

Year: 2025 Journal: IEEE Transactions on Electron Devices Vol: 72 (8)Pages: 4190-4195 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/ted.2025.3580394

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Keywords:

Diode Optoelectronics Ion implantation Materials science Ion Silicon Physics Quantum mechanics

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Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

InAs n-i-p Diodes Fabricated Using S and Si Ion Implantation

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