Correlation between morphological and electrical characteristics of Pt/SrBi₂Ta₂O₉/CeO₂/Si capacitors

Abstract

Abstract We have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi2Ta2O9(SBT)/CeO2/Si. The CeO2 thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100 [ddot]C for 5 min in a halogen lamp furnace. The SBT thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO2/Si substrates. The surface morphology of SBT films was affected by the substrate roughness of CeO2 thin films. The leakage current densities of SBT films on the as-deposited and the 900 [ddot]C annealed CeO2 films were 1.9×10−6 A/cm2 and 6.1×10−9A/cm2, respectively at -10 V.