Electrical Properties of Pt/SrBi₂Ta₂O₉/CeO₂/SiO₂/Si Structure for Nondestructive Readout Memory

Abstract

Memory window and leakage current density of Pt/SrBi 2 Ta 2 O 9 /CeO 2 /SiO 2 /Si structure have been investigated for non destructive read out memory. Coercive field that decisively affects on the memory window becomes greater by the interposition of the CeO 2 insulator between SrBi 2 Ta 2 O 9 and SiO 2 and thus the memory window also increases with an electric field to the SrBi 2 Ta 2 O 9 . A typical value of memory window for Pt/SrBi 2 Ta 2 O 9 (140 nm)/CeO 2 /SiO 2 /Si is in the range of 0.5 – 3.0 V, which is high enough for the non destructive read out memory, at the applied voltage of 3 – 9 V. The leakage current density is remained at 3 ×10 -8 A/cm 2 until the applied voltage increases up to 10 V.