JOURNAL ARTICLE

Low-Voltage Switching Characteristics of SrBi2Ta2O9 Capacitors

Kazushi AmanumaT. Kunio

Year: 1996 Journal:   Japanese Journal of Applied Physics Vol: 35 (9S)Pages: 5229-5229   Publisher: Institute of Physics

Abstract

Ferroelectric capacitor arrays were fabricated using SrBi 2 Ta 2 O 9 (SBT) thin films. Hysteresis and pulse responses were measured as functions of capacitor size and applied voltage. The remanent polarization ( P r ) at 5 V does not depend on capacitor size, though P r at low applied voltage decreases considerably as capacitor size decreases below 10 µ m. High-voltage pulse application enhances low-voltage polarization switching. Retention characteristics strongly depend on operating voltage. Switching charge at 2 V or above is stable up to 10 4 s retention, while that at 1 V operation decreases with increasing retention time.

Keywords:
Capacitor Materials science Voltage Ferroelectric capacitor Ferroelectricity Hysteresis Analytical Chemistry (journal) Polarization (electrochemistry) Optoelectronics Electrical engineering Chemistry Dielectric Condensed matter physics Physics

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0.93
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Citation History

Topics

Ferroelectric and Piezoelectric Materials
Physical Sciences →  Materials Science →  Materials Chemistry
Acoustic Wave Resonator Technologies
Physical Sciences →  Engineering →  Biomedical Engineering
Microwave Dielectric Ceramics Synthesis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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