MOCVD of SrBi2Ta2O9 for Integrated Ferroelectric Capacitors

B. C. Hendrix; Frank Hintermaier; Debra A. Desrocherst; Jeffrey F. Roedert; Gautam Bhandarit; Maggie Chappuist; Thomas H. Baumt; Peter C. Van Buskirkt; C. Dehm; E. Fritsch; Nikolas Nagel; W. Hönlein; C. Mazuré

doi:10.1557/proc-493-225

JOURNAL ARTICLE

MOCVD of SrBi₂Ta₂O₉ for Integrated Ferroelectric Capacitors

B. C. Hendrix Frank Hintermaier Debra A. Desrocherst Jeffrey F. Roedert Gautam Bhandarit Maggie Chappuist Thomas H. Baumt Peter C. Van Buskirkt C. Dehm E. Fritsch Nikolas Nagel W. Hönlein C. Mazuré

Year: 1997 Journal: MRS Proceedings Vol: 493 Publisher: Cambridge University Press

DOI: 10.1557/proc-493-225

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Keywords:

Metalorganic vapour phase epitaxy Materials science Ferroelectric RAM Ferroelectricity Chemical vapor deposition Dielectric Annealing (glass) Optoelectronics Analytical Chemistry (journal) Nanotechnology Composite material Layer (electronics) Epitaxy

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Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Microwave Dielectric Ceramics Synthesis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

MOCVD of SrBi₂Ta₂O₉ for Integrated Ferroelectric Capacitors

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