CEMS study of iron disilicide formation by iron ion implantation into silicon

M. Dobler; H. Reuther

doi:10.1016/s0168-583x(99)00478-4

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CEMS study of iron disilicide formation by iron ion implantation into silicon

M. Dobler H. Reuther

Year: 1999 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 155 (4)Pages: 468-478 Publisher: Elsevier BV

DOI: 10.1016/s0168-583x(99)00478-4

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Keywords:

Auger electron spectroscopy Conversion electron mössbauer spectroscopy Annealing (glass) Materials science Analytical Chemistry (journal) Silicide Mössbauer spectroscopy Silicon Ion implantation Metastability Scanning electron microscope Ion Crystallography Metallurgy Chemistry Mössbauer effect

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

CEMS study of iron disilicide formation by iron ion implantation into silicon

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