Electron mobility in heavily doped and compensated gallium arsenide due to scattering by potential fluctuations

Abstract

The electron mobility at 77K of heavily doped and compensated gallium arsenide is calculate assuming the predominant scattering comes from a smooth random potential due to a large number of charged impurities with correlated impurity distribution. The nonparabolicity of a conduction band is taken into account at large electron concentrations. A set of samples with given compensation ratios and electron concentrations has been used for experimental verification of the model which explains well the experimental mobilities.