Room-temperature measurements of the thermoelectric power α and Hall coefficient R have been made as a function of the magnetic field B on polycrystalline n-type samples of InAs x Sb 1−x , alloys of carrier concentration ~10 17 /cm 3 . Hence saturation values α ∞ and R ∞ and zero-field values α ∞ and R ∞ have been determined. Using these values of α ∞ and α ∞ and assuming a Kane model for the conduction band, values have been determined for the Fermi energy E F and the scattering parameter s over the whole alloy range. In all cases, the value of s is close to 0.5, indicating that the dominant scattering mechanism in the alloys is piezoelectric scattering. From the E F and R ∞ data, values of the bottom of the band effective mass have been calculated and these are compared with similar values obtained from Faraday rotation results.
William M. CoderreJohn C. Woolley
Eric H. van TongerlooJohn C. Woolley
Mathew B. ThomasJohn C. Woolley