Free-carrier Faraday rotation in InAs_xSb_1−x alloys

Abstract

Room-temperature free-carrier Faraday rotation measurements in the wavelength range 6–25 μ and Hall-coefficient measurements have been made on polycrystalline n-type samples of InAs x Sb 1−x alloys of carrier concentration ~10 17 /cm 3 . Using these data and a Kane equation for the conduction band, values of the bottom of the band effective mass m 0 * have been determined over the whole alloy range. The results are compared with similar data from magnetothermoelectric power measurements and also with previously calculated data. From the m 0 * results, values of the square of the matrix element P 2 have been calculated as a function of x.