Organometallic VPE Growth of InAs_1-xSb_xon InAs

Abstract

InAs1-xSbx vapor phase epitaxial growth was carried out on InAs substrate using triethylindium, triethylantimony and arsine. The vapor-solid distribution relations for the group V elements were obtained. A simplified formula for the distribution relation, which assumes thermodynamical equilibrium, is presented. The calculated distribution relation was fitted with experimental results. To study the lattice deformations rocking-curve measurements were made using X-ray double-crystal diffraction for (004) and (115) planes. The lattice distortion gradually decreased with increasing lattice mismatch up to 7 %, and cross-hatched surfaces were also observed in this region.