Electron-positron momentum density in InAs _x Sb₁- _x

Abstract

Abstract Positron annihilation calculations have been performed on semiconductor alloys with the aim of studying the disorder effect on the electron momentum distribution in InAs x Sb1- x . The electron wavefunctions are calculated using the pseudopotential method within the virtual-crystal approximation with and without incorporating the disorder effect as an effective potential. The calculations of the positron wavefunctions have been made in an identical manner, employing the point-core approximation for the ionic potential. The shapes of the profiles indicate that the angular correlation of positron annihilation radiation along different crystallographic directions in InAs x Sb1- x is not sensitive to the disorder effect.