Ni silicide formation on epitaxial Si1−yCy/(001) layers

S.W. Lee; S. H. Huang; S. L. Cheng; P. S. Chen; Wen‐Wei Wu

doi:10.1016/j.tsf.2010.05.015

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Ni silicide formation on epitaxial Si1−yCy/(001) layers

S.W. Lee S. H. Huang S. L. Cheng P. S. Chen Wen‐Wei Wu

Year: 2010 Journal: Thin Solid Films Vol: 518 (24)Pages: 7394-7397 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2010.05.015

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Keywords:

Materials science Silicide Epitaxy Thermal stability Thin film Kinetics Crystallography Optoelectronics Silicon Layer (electronics) Nanotechnology Chemical engineering Chemistry

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ni silicide formation on epitaxial Si1−yCy/(001) layers

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