Molecular beam epitaxial growth and photoluminescence investigation of Si1−yCy layers

S. Zerlauth; C. Penn; Heinz Seyringer; J. Stangl; G. Brunthaler; G. Bauer; F. Schäffler

doi:10.1016/s0040-6090(98)00439-8

ScienceGate Book Chapters

JOURNAL ARTICLE

Molecular beam epitaxial growth and photoluminescence investigation of Si1−yCy layers

S. Zerlauth C. Penn Heinz Seyringer J. Stangl G. Brunthaler G. Bauer F. Schäffler

Year: 1998 Journal: Thin Solid Films Vol: 321 (1-2)Pages: 33-40 Publisher: Elsevier BV

DOI: 10.1016/s0040-6090(98)00439-8

Get Full-Text PDF Get Analytical Report

Keywords:

Molecular beam epitaxy Photoluminescence Materials science Reflection high-energy electron diffraction Superlattice Epitaxy Annealing (glass) Diffraction Crystallography Electron diffraction Analytical Chemistry (journal) Condensed matter physics Optoelectronics Optics Chemistry Nanotechnology Physics

Metrics

Cited By

2.66

FWCI (Field Weighted Citation Impact)

Refs

0.90

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Molecular beam epitaxial growth and photoluminescence investigation of Si1−yCy layers

Metrics

Citation History

Topics

Related Documents

Platinum silicide formation on Si1−yCy epitaxial layers

Characterization of epitaxial Si1−yCy layers on Si(001) grown by gas-source molecular beam epitaxy

Substitutional carbon incorporation into molecular beam epitaxy-grown Si1−yCy layers

Ni silicide formation on epitaxial Si1−yCy/(001) layers

Photoluminescence from pseudomorphic Si1−yCy layers on Si substrates