Deposition properties of selective tungsten chemical vapor deposition

Wen-Kuan Yeh; Mao-Chieh Chen; Pei-Jan Wang; Lu-Min Liu; Mou-Shiung Lin

doi:10.1016/0254-0584(96)80120-9

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Deposition properties of selective tungsten chemical vapor deposition

Wen-Kuan Yeh Mao-Chieh Chen Pei-Jan Wang Lu-Min Liu Mou-Shiung Lin

Year: 1996 Journal: Materials Chemistry and Physics Vol: 45 (3)Pages: 284-287 Publisher: Elsevier BV

DOI: 10.1016/0254-0584(96)80120-9

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Keywords:

Silane Chemical vapor deposition Deposition (geology) Volumetric flow rate Silicon Analytical Chemistry (journal) Tungsten Chemistry Ion plating Plasma-enhanced chemical vapor deposition Partial pressure Etching (microfabrication) Substrate (aquarium) Materials science Thin film Nanotechnology Metallurgy Composite material Layer (electronics) Oxygen Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Deposition properties of selective tungsten chemical vapor deposition

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