Selective Tungsten Chemical Vapor Deposition with High Deposition Rate for ULSI Application

Abstract

For the application of selective tungsten chemical vapor deposition (CVD) on ULSI device fabrication, two serious problems still remain: loss of selectivity and damage on devices. Selective tungsten deposition with the high rate of 1 µm/min has been achieved by a new CVD system having a cold susceptor, where the high selectivity has been well maintained continuously. We have also found that the tungsten-Si contacts with good performance of low contact resistance and no device damage can be formed by controlling the initial growth of tungsten.