Hydrogenated amorphous germanium Schottky barrier diodes

Javier Faulín; I. Chambouleyron

doi:10.1088/0953-8984/5/33a/128

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Hydrogenated amorphous germanium Schottky barrier diodes

Javier Faulín I. Chambouleyron

Year: 1993 Journal: Journal of Physics Condensed Matter Vol: 5 (33A)Pages: A347-A348 Publisher: IOP Publishing

DOI: 10.1088/0953-8984/5/33a/128

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Abstract

The current-voltage characteristics of Pd/a-Ge:H Schottky barriers are presented. The devices have been deposited by the RF sputtering method. The I-V curve follows an exponential law and the diode ideality factor is eta =2 indicating the existence of recombination currents in the space charge region.

Keywords:

Schottky diode Optoelectronics Germanium Diode Schottky barrier Materials science Amorphous solid Sputtering Space charge Chemistry Silicon Physics Nanotechnology Crystallography Thin film

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Hydrogenated amorphous germanium Schottky barrier diodes

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