JOURNAL ARTICLE
Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
Yasuyoshi MishimaMasataka HiroseYukio Ôsaka
Year: 1981 Journal: Japanese Journal of Applied Physics Vol: 20 (3)Pages: 593-593 Publisher: Institute of Physics
Abstract
We report detailed studies on the forward current-voltage characteristics of Pd/a-Si:H Schottky barrier diodes. Exact values of the barrier height and its temperature coefficient have been determined by the internal photoemission technique. Based upon this result, the current transport mechanism through the a-Si:H Schottky barrier has been quantitatively examined. The fundamental characteristics of the Schottky barrier are considered to be dominated by diffusion theory rather than by thermionic emission theory.
Keywords:
Thermionic emission Schottky barrier Schottky diode Metal–semiconductor junction Materials science Rectangular potential barrier Optoelectronics Diffusion Silicon Current (fluid) Diode Diffusion barrier Amorphous silicon Schottky effect Diffusion current Condensed matter physics Nanotechnology Physics Thermodynamics Electron Crystalline silicon
Metrics
22
Cited By
3.51
FWCI (Field Weighted Citation Impact)
10
Refs
0.93
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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