JOURNAL ARTICLE
Schottky barrier junctions of hydrogenated amorphous silicon-germanium alloys
Hideharu MatsuuraHideyo OkushiKazunobu Tanaka
Year: 1987 Journal: Journal of Non-Crystalline Solids Vol: 97-98 Pages: 963-966 Publisher: Elsevier BV
Keywords:
Materials science Quantum tunnelling Condensed matter physics Schottky barrier Germanium Schottky diode Deep-level transient spectroscopy Amorphous silicon Optoelectronics Conduction band Silicon Electron Diffusion Thermal conduction Crystalline silicon Diode Physics
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1
Cited By
0.22
FWCI (Field Weighted Citation Impact)
4
Refs
0.48
Citation Normalized Percentile
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Topics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
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