Atomic Layer Controlled Deposition of Al2O3 Films Employing Trimethylaluminum (TMA) and H2O Vapor

Anne C. Dillon; A. W. Ott; Steven M. George; J. Douglas Way

doi:10.1557/proc-335-335

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Atomic Layer Controlled Deposition of Al₂O₃ Films Employing Trimethylaluminum (TMA) and H₂O Vapor

Anne C. Dillon A. W. Ott Steven M. George J. Douglas Way

Year: 1993 Journal: MRS Proceedings Vol: 335 Publisher: Cambridge University Press

DOI: 10.1557/proc-335-335

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Keywords:

Materials science Atomic layer deposition Analytical Chemistry (journal) Layer (electronics) Chemical vapor deposition Passivation Deposition (geology) Fourier transform infrared spectroscopy Silicon Chemical engineering Nanotechnology Chemistry Optoelectronics Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

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Silicon Nanostructures and Photoluminescence

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Atomic Layer Controlled Deposition of Al₂O₃ Films Employing Trimethylaluminum (TMA) and H₂O Vapor

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