JOURNAL ARTICLE
Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition
Li ZhengXinhong ChengYuehui YuYa‐Hong XieXiaolong LiZhongjian Wang
Year: 2014 Journal: Physical Chemistry Chemical Physics Vol: 17 (5)Pages: 3179-3185 Publisher: Royal Society of Chemistry
Abstract
Al2O3-doped HfO2 with both amorphous state and high relative permittivity was directly deposited on graphene by atomic layer deposition.
Keywords:
Atomic layer deposition Graphene Doping Deposition (geology) Materials science Layer (electronics) Nanotechnology Chemical engineering Analytical Chemistry (journal) Optoelectronics Chemistry Environmental chemistry
Metrics
29
Cited By
2.22
FWCI (Field Weighted Citation Impact)
41
Refs
0.90
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Ferroelectric and Negative Capacitance Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Graphene research and applications
Physical Sciences → Materials Science → Materials Chemistry
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