Structural characterization of MOVPE grown ZnMgSSe/ZnSe heterostructures by HRXRD

Jing-Jing Xu; M. Lünenbüger; H. Kalisch; H. Hamadeh; J. Woitok; M. Heuken

doi:10.1016/s0022-0248(98)80309-6

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Structural characterization of MOVPE grown ZnMgSSe/ZnSe heterostructures by HRXRD

Jing-Jing Xu M. Lünenbüger H. Kalisch H. Hamadeh J. Woitok M. Heuken

Year: 1998 Journal: Journal of Crystal Growth Vol: 184-185 Pages: 134-138 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(98)80309-6

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Keywords:

Heterojunction Metalorganic vapour phase epitaxy Photoluminescence Materials science Layer (electronics) Full width at half maximum Strain (injury) Perpendicular Crystallography Spectroscopy Analytical Chemistry (journal) Optoelectronics Chemistry Epitaxy Nanotechnology Biology Geometry Physics

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

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Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Structural characterization of MOVPE grown ZnMgSSe/ZnSe heterostructures by HRXRD

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