Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE

А. Л. Гурский; E. V. Lutsenko; G. P. Yablonskii; H. Hamadeh; H. Kalisch; B. Schineller; M. Heuken

doi:10.1016/s0921-5107(97)00222-5

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Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE

А. Л. Гурский E. V. Lutsenko G. P. Yablonskii H. Hamadeh H. Kalisch B. Schineller M. Heuken

Year: 1998 Journal: Materials Science and Engineering B Vol: 51 (1-3)Pages: 22-25 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(97)00222-5

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Keywords:

Lasing threshold Heterojunction Metalorganic vapour phase epitaxy Optoelectronics Materials science Photoluminescence Quantum well Excitation Optics Laser Epitaxy Physics Nanotechnology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photorefractive and Nonlinear Optics

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE

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