Characterization of ZnMgSSe/ZnSe quantum wells grown by MOVPE

H. Hamadeh; M. Lünenbürger; H. Kalisch; M. Heuken

doi:10.1016/s0022-0248(98)80181-4

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Characterization of ZnMgSSe/ZnSe quantum wells grown by MOVPE

H. Hamadeh M. Lünenbürger H. Kalisch M. Heuken

Year: 1998 Journal: Journal of Crystal Growth Vol: 184-185 Pages: 867-871 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(98)80181-4

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Keywords:

Photoluminescence Quantum well Exciton Metalorganic vapour phase epitaxy Chemistry Condensed matter physics Epitaxy Spectroscopy Band gap Photoluminescence excitation Materials science Optics Optoelectronics Physics Laser

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Characterization of ZnMgSSe/ZnSe quantum wells grown by MOVPE

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