Barrier height modification in heat-treated aluminium Schottky diodes on hydrogenated amorphous silicon

K. V. Krishna; S. Guha; K. L. Narasimhan

doi:10.1016/0379-6787(81)90065-x

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Barrier height modification in heat-treated aluminium Schottky diodes on hydrogenated amorphous silicon

K. V. Krishna S. Guha K. L. Narasimhan

Year: 1981 Journal: Solar Cells Vol: 4 (2)Pages: 153-156 Publisher: Elsevier BV

DOI: 10.1016/0379-6787(81)90065-x

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Keywords:

Aluminium Amorphous silicon Materials science Silicon Schottky diode Amorphous solid Diode Schottky barrier Optoelectronics Metallurgy Crystalline silicon Chemistry Crystallography

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Barrier height modification in heat-treated aluminium Schottky diodes on hydrogenated amorphous silicon

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