JOURNAL ARTICLE

Schottky barrier photodetectors based on AlGaN

A. OsinskyS. GangopadhyayBeomdu LimM. Zubair AnwarM. Asif KhanD.V. KuksenkovH. Temkin

Year: 1998 Journal:   Applied Physics Letters Vol: 72 (6)Pages: 742-744   Publisher: American Institute of Physics

Abstract

We report solar-blind AlxGa1−xN photovoltaic detectors with cutoff wavelengths as short as 290 nm. Mesa geometry devices of different active areas are fabricated and characterized for spectral responsitivity, speed, and noise performance. The responsivity of the devices near the cutoff wavelength is 0.07 A/W. The detector noise is found to be 1/f limited, with a noise equivalent power of 6.6×10−9 W over the total response bandwidth of 100 kHz.

Keywords:
Photodetector Responsivity Optoelectronics Cutoff frequency Materials science Detector Schottky barrier Noise-equivalent power Noise (video) Wavelength Schottky diode Cutoff Bandwidth (computing) Johnson–Nyquist noise Optics Physics Diode Telecommunications

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144
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8.92
FWCI (Field Weighted Citation Impact)
10
Refs
0.99
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Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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