AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

T.K. Ko; S.J. Chang; Yan Su; M. L. Lee; Chao Chang; Yu‐Cheng Lin; Shih‐Chang Shei; Jinn‐Kong Sheu; Wei‐Sheng Chen; C.F. Shen

doi:10.1016/j.jcrysgro.2005.05.067

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AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

T.K. Ko S.J. Chang Yan Su M. L. Lee Chao Chang Yu‐Cheng Lin Shih‐Chang Shei Jinn‐Kong Sheu Wei‐Sheng Chen C.F. Shen

Year: 2005 Journal: Journal of Crystal Growth Vol: 283 (1-2)Pages: 68-71 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2005.05.067

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Keywords:

Photodetector Optoelectronics Materials science Schottky barrier Wavelength Dark current Schottky diode Wide-bandgap semiconductor Detector Optics Diode Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

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