The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

Eui Kwan Koh; Young Ju Park; Eun Kyu Kim; Chan Soo Park; Suk Hun Lee; Jung Hee Lee; Sung Ho Choh

doi:10.1016/s0022-0248(00)00550-9

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The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

Eui Kwan Koh Young Ju Park Eun Kyu Kim Chan Soo Park Suk Hun Lee Jung Hee Lee Sung Ho Choh

Year: 2000 Journal: Journal of Crystal Growth Vol: 218 (2-4)Pages: 214-220 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(00)00550-9

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Keywords:

Substrate (aquarium) Materials science Layer (electronics) Epitaxy Chemical vapor deposition Photoluminescence Buffer (optical fiber) Optoelectronics Stress (linguistics) Raman spectroscopy Raman scattering Analytical Chemistry (journal) Composite material Chemistry Optics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

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