MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer

Li Wang; Yunti Pu; Y.F. Chen; Chunnan Mo; Wenqing Fang; Chuanbing Xiong; Jiangnan Dai; Fengyi Jiang

doi:10.1016/j.jcrysgro.2005.06.058

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MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer

Li Wang Yunti Pu Y.F. Chen Chunnan Mo Wenqing Fang Chuanbing Xiong Jiangnan Dai Fengyi Jiang

Year: 2005 Journal: Journal of Crystal Growth Vol: 284 (3-4)Pages: 459-463 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2005.06.058

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Keywords:

Metalorganic vapour phase epitaxy Photoluminescence Materials science Epitaxy Layer (electronics) Substrate (aquarium) Thin film Buffer (optical fiber) Optoelectronics Diffraction Chemical vapor deposition Single crystal Analytical Chemistry (journal) Crystallography Optics Nanotechnology Chemistry

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Copper-based nanomaterials and applications

Physical Sciences → Materials Science → Materials Chemistry

MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer

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