Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

Xianfeng Ni; Li Zhu; Zhizhen Ye; Zhe Zhao; Haiping Tang; Wei Hong; Binghui Zhao

doi:10.1016/j.surfcoat.2004.10.073

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Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

Xianfeng Ni Li Zhu Zhizhen Ye Zhe Zhao Haiping Tang Wei Hong Binghui Zhao

Year: 2004 Journal: Surface and Coatings Technology Vol: 198 (1-3)Pages: 350-353 Publisher: Elsevier BV

DOI: 10.1016/j.surfcoat.2004.10.073

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Keywords:

Materials science Buffer (optical fiber) Layer (electronics) Optoelectronics Substrate (aquarium) Characterization (materials science) Nanotechnology Electrical engineering

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

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