Sub-band energies of highly strained InGaAs-GaAs quantum wells

Abstract

The sub-band energies of InxGa1-xAs quantum wells strained between GaAs barriers and substrate are calculated using a model which takes into account strain, nonparabolicity and quantum well effects. A comparison is made with low-temperature photoluminescence and photoluminescence excitation spectra of InxGa1-xAs quantum wells for which x=0.28. The transitions 1H-1C, 1L-1C and 2H-2C have been identified for the 7.5 nm well.