JOURNAL ARTICLE
Highly strained InGaAs/GaAs quantum wells obtained by selective epitaxy
Keywords:
Quantum well Gallium arsenide Optoelectronics Epitaxy Materials science Indium gallium arsenide Physics Nanotechnology Optics
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Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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