On the band gap of InGaAs/GaAs strained quantum wells

Abstract

InGaAs/GaAs strained quantum wells have been grown by MBE and the effective band gap measured by photoluminescence. The measured values are compared with calculations based on a semiempirical model of the band structure. The agreement is excellent and the authors believe this relatively straight-forward theoretical technique will be of value to those engineers who require values of the band gap for device design in this and similar strained layer systems.