Interface effects in amorphous silicon/nitride multilayers

C. C. Tsai; M. J. Thompson; R. A. Street; M. Stutzmann; F. A. Ponce

doi:10.1016/0022-3093(85)90828-2

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Interface effects in amorphous silicon/nitride multilayers

C. C. Tsai M. J. Thompson R. A. Street M. Stutzmann F. A. Ponce

Year: 1985 Journal: Journal of Non-Crystalline Solids Vol: 77-78 Pages: 995-998 Publisher: Elsevier BV

DOI: 10.1016/0022-3093(85)90828-2

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Keywords:

Materials science Superlattice Interface (matter) Silicon nitride Amorphous solid Nitride Band bending Silicon Amorphous silicon Optoelectronics Condensed matter physics Nanotechnology Composite material Crystalline silicon Crystallography Chemistry Physics Layer (electronics)

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Interface effects in amorphous silicon/nitride multilayers

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