Nature of AX center in amorphous silicon/nitride multilayers

Kunji Chen; Guomin Mao; Zhifeng Li; Hong Chen; Zhuoyun Ge; H. Fritzsche

doi:10.1016/0022-3093(89)90712-6

ScienceGate Book Chapters

JOURNAL ARTICLE

Nature of AX center in amorphous silicon/nitride multilayers

Kunji Chen Guomin Mao Zhifeng Li Hong Chen Zhuoyun Ge H. Fritzsche

Year: 1989 Journal: Journal of Non-Crystalline Solids Vol: 114 Pages: 759-761 Publisher: Elsevier BV

DOI: 10.1016/0022-3093(89)90712-6

Get Full-Text PDF Get Analytical Report

Keywords:

Photoconductivity Center (category theory) Silicon nitride Materials science Amorphous solid Amorphous silicon Nitride Silicon Conductivity Interface (matter) Optoelectronics Crystallography Nanotechnology Crystalline silicon Chemistry Physical chemistry Composite material Layer (electronics)

Metrics

Cited By

0.42

FWCI (Field Weighted Citation Impact)

Refs

0.63

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nature of AX center in amorphous silicon/nitride multilayers

Metrics

Topics

Related Documents

Interface effects in amorphous silicon/nitride multilayers

Metastable effects in hydrogenated amorphous silicon–silicon nitride multilayers

Luminescence processes in amorphous hydrogenated silicon-nitride nanometric multilayers

Properties of amorphous silicon/amorphous silicon-germanium multilayers

Nitrogen Diffusion in Amorphous Silicon Nitride Isotope Multilayers Probed by Neutron Reflectometry