Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation

I. Boerasu; M. Pereira; M. J. M. Gomes; B.E. Watts; F. Leccabue; Paula M. Vilarinho

doi:10.1016/s0955-2219(03)00403-5

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Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation

I. Boerasu M. Pereira M. J. M. Gomes B.E. Watts F. Leccabue Paula M. Vilarinho

Year: 2003 Journal: Journal of the European Ceramic Society Vol: 24 (6)Pages: 1633-1636 Publisher: Elsevier BV

DOI: 10.1016/s0955-2219(03)00403-5

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Keywords:

Materials science Thin film Doping Pulsed laser deposition Ferroelectricity Laser ablation Layer (electronics) Hysteresis Photoelectric effect Phase (matter) Diffraction Optoelectronics Composite material Analytical Chemistry (journal) Laser Optics Nanotechnology Dielectric

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Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation

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