Graded band gap ohmic contact to <i>p</i>-ZnSe

Y. Fan; Jung Han; He Liu; Junji Saraie; R. L. Gunshor; M. Hagerott; Heonsu Jeon; A. V. Nurmikko; Guoqiang Hua; N. Ōtsuka

doi:10.1063/1.107945

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Graded band gap ohmic contact to p-ZnSe

Y. Fan Jung Han He Liu Junji Saraie R. L. Gunshor M. Hagerott Heonsu Jeon A. V. Nurmikko Guoqiang Hua N. Ōtsuka

Year: 1992 Journal: Applied Physics Letters Vol: 61 (26)Pages: 3160-3162 Publisher: American Institute of Physics

DOI: 10.1063/1.107945

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Abstract

We describe a low-resistance quasi-ohmic contact to p-ZnSe which involves the injection of holes from heavily doped ZnTe into ZnSe via a Zn(Se,Te) pseudograded band gap region. The specific contact resistance is measured to be in the range of 2–8×10−3 Ω cm2. The graded heterostructure scheme is incorporated as an efficient injector of holes for laser diode and light emitting diode devices, demonstrating the usefulness of this new contact scheme at actual device current densities.

Keywords:

Ohmic contact Optoelectronics Materials science Contact resistance Diode Wide-bandgap semiconductor Band gap Doping Light-emitting diode Heterojunction Semiconductor laser theory Laser Optics Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Graded band gap ohmic contact to p-ZnSe

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