Ohmic contacts to <i>p</i>-type ZnSe using a ZnSe/BeTe superlattice

F. Vigué; Paul Brunet; P. Lorenzini; E. Tournié; J. P. Faurie

doi:10.1063/1.125346

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Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice

F. Vigué Paul Brunet P. Lorenzini E. Tournié J. P. Faurie

Year: 1999 Journal: Applied Physics Letters Vol: 75 (21)Pages: 3345-3347 Publisher: American Institute of Physics

DOI: 10.1063/1.125346

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Abstract

Various configurations of pseudograded BeTe/ZnSe superlattices have been investigated to form a nonalloyed contact onto nitrogen-doped p-type ZnSe layers. Best results were obtained by using a fully N-doped superlattice with a 20-ML-thick pseudoperiod and with the thickness of individual layers in the pseudoperiod varying by 1 ML steps. A specific contact resistance of 6×10−2 Ω cm2 has been measured for a ZnSe p-type doping level of 2×1017 cm−3. Truly perfect ohmic contact is obtained.

Keywords:

Ohmic contact Superlattice Materials science Doping Optoelectronics Contact resistance Condensed matter physics Layer (electronics) Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

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Quantum Dots Synthesis And Properties

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Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice

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