Integration issues of high-k and metal gate into conventional CMOS technology

S. C. Song; Z. Zhang; C. Huffman; S.H. Bae; J.H. Sim; P. D. Kirsch; P. Majhi; N. Moumen; B.H. Lee

doi:10.1016/j.tsf.2005.09.080

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Integration issues of high-k and metal gate into conventional CMOS technology

S. C. Song Z. Zhang C. Huffman S.H. Bae J.H. Sim P. D. Kirsch P. Majhi N. Moumen B.H. Lee

Year: 2005 Journal: Thin Solid Films Vol: 504 (1-2)Pages: 170-173 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2005.09.080

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Keywords:

CMOS Materials science Dopant Optoelectronics Metal gate High-κ dielectric Dielectric Stack (abstract data type) Electron mobility Crystallization Electronic engineering Engineering physics Doping Electrical engineering Computer science Gate oxide Chemistry Voltage Transistor Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integration issues of high-k and metal gate into conventional CMOS technology

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