Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering

Ahmed Ziani; Claire Le Paven-Thivet; Didier Fasquelle; Laurent Le Gendre; Ratiba Benzerga; Franck Tessier; François Cheviré; Jean-Claude Carru; Ala Sharaiha

doi:10.1016/j.tsf.2011.10.192

JOURNAL ARTICLE

Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering

Ahmed Ziani Claire Le Paven-Thivet Didier Fasquelle Laurent Le Gendre Ratiba Benzerga Franck Tessier François Cheviré Jean-Claude Carru Ala Sharaiha

Year: 2011 Journal: Thin Solid Films Vol: 520 (14)Pages: 4536-4540 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2011.10.192

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Keywords:

Sputtering Materials science Dielectric Thin film Dissipation factor Epitaxy Analytical Chemistry (journal) Permittivity Nitrogen Dielectric loss Optoelectronics Composite material Layer (electronics) Chemistry Nanotechnology

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Inorganic Chemistry and Materials

Physical Sciences → Chemistry → Inorganic Chemistry

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering

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