Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

G. Stevens; P. Santos-Filho; S. Habermehl; G. Lucovsky

doi:10.1557/proc-377-313

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Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

G. Stevens P. Santos-Filho S. Habermehl G. Lucovsky

Year: 1995 Journal: MRS Proceedings Vol: 377 Publisher: Cambridge University Press

DOI: 10.1557/proc-377-313

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Keywords:

Deuterium Materials science Chemical vapor deposition Analytical Chemistry (journal) Hydrogen Silicon nitride Plasma Thin film Nitride Remote plasma Raman spectroscopy Silicon Nanotechnology Chemistry Layer (electronics) Organic chemistry Atomic physics

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Topics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

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