JOURNAL ARTICLE

Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

G. StevensP. Santos-FilhoS. HabermehlG. Lucovsky

Year: 1995 Journal:   MRS Proceedings Vol: 377   Publisher: Cambridge University Press
Keywords:
Deuterium Materials science Chemical vapor deposition Analytical Chemistry (journal) Hydrogen Silicon nitride Plasma Thin film Nitride Remote plasma Raman spectroscopy Silicon Nanotechnology Chemistry Layer (electronics) Organic chemistry Atomic physics

Metrics

3
Cited By
2.07
FWCI (Field Weighted Citation Impact)
0
Refs
0.84
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Copper Interconnects and Reliability
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
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