Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD

Abstract

The successful fabrication of an ion-implanted GaAs/AlGaAs heterojunction FET device is discussed. Half-micrometer gate-length FET devices are fabricated by ion implantation into GaAs/AlGa heterostructures grown by metalorganic chemical vapor deposition (MOCVD) on 3-in-diameter GaAs substrates. The FET device exhibits a maximum extrinsic transconductance of 280 mS/mm with reduced transconductance variation over 2 V of gate bias. Excellent microwave performance is achieved with an f/sub t/ of 40 GHz, which is comparable to results obtained from 0.25- mu m gate GaAs MESFETs. The effects of ion implantation on the heterojunction and corresponding device characteristics are also discussed.< >