High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

G.-W. Wang; R.L. Pierson; P.M. Asbeck; K.-C. Wang; N.-L. Wang; R.B. Nubling; Mau-Chung Frank Chang; J. P. Salerno; Sudhir K. Sastry

doi:10.1109/55.82083

JOURNAL ARTICLE

High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

G.-W. Wang R.L. Pierson P.M. Asbeck K.-C. Wang N.-L. Wang R.B. Nubling Mau-Chung Frank Chang J. P. Salerno Sudhir K. Sastry

Year: 1991 Journal: IEEE Electron Device Letters Vol: 12 (6)Pages: 347-349 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/55.82083

Get Full-Text PDF Get Analytical Report

Abstract

Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.< >

Keywords:

Metalorganic vapour phase epitaxy Bipolar junction transistor Chemical vapor deposition Optoelectronics Materials science Heterojunction Heterojunction bipolar transistor Cutoff frequency Doping Microwave Carbon fibers Gallium arsenide Transistor Electrical engineering Nanotechnology Epitaxy Computer science Voltage Telecommunications

Metrics

Cited By

3.59

FWCI (Field Weighted Citation Impact)

Refs

0.94

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

Abstract

Metrics

Citation History

Topics

Related Documents

High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

AlGaAs/GaAs heterojunction bipolar transistors with C-doped base grown by AP-MOVPE

High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Heavily Doped Base

MOMBE-grown carbon-doped base self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave applications